IR LED’s Wafers 680-950nm
Our company manufactures a wide range of IR emitting structures according to concrete requirements of customers, which are characterized by a certain set of parameters, such as:
-
type of structure (DH or DDH);
-
quantity and type of epitaxial layers;
-
emission power;
-
peak wavelength of emission;
-
speed of response.
The structures are made as round wafers with diameter 37-40mm or 50mm and with thickness 150-450 microns.
Main types of structures are indicated in the following Table:
|
Type |
Material |
Peak wave |
Power |
Forward |
Reverse |
Response |
|||
|
min. |
typ. |
typ. |
max. |
Tr |
Tf |
||||
|
HS950P |
GaAs/ |
950 |
1.0 |
1.2 |
1.1 |
1.2 |
8 |
500 |
500 |
|
DH860N type 1 |
AlGaAs/ |
860 |
0.8 |
1.2 |
1.30 |
1.40 |
8 |
30 |
25 |
|
DH860N type 2 |
AlGaAs/ |
860 |
1.4 |
1.8 |
1.30 |
1.40 |
8 |
60 |
50 |
|
DDH910P |
AlGaAs/ |
910 |
3.0 |
3.5 |
1.25 |
1.35 |
8 |
120 |
100 |
|
DDH870P |
AlGaAs/ |
870 |
3.5 |
4.0 |
1.25 |
1.35 |
8 |
30 |
25 |
|
DDH870PS |
AlGaAs/ |
870 |
2.8 |
3.4 |
1.25 |
1.35 |
8 |
10 |
10 |
|
DDH850P |
AlGaAs/ |
850 |
3.5 |
4.0 |
1.30 |
1.40 |
8 |
30 |
25 |
|
DDH900N |
AlGaAs/ |
900 |
3.0 |
3.5 |
1.35 |
1.50 |
8 |
80 |
60 |
|
DDH870N |
AlGaAs/ |
870 |
3.5 |
4.3 |
1.35 |
1.50 |
8 |
40 |
30 |
|
DDH850N |
AlGaAs/ |
850 |
3.5 |
4.0 |
1.40 |
1.55 |
8 |
40 |
30 |
|
DDH810N |
AlGaAs/ |
810 |
3.8 |
4.5 |
1.45 |
1.65 |
8 |
40 |
30 |
|
DDH770N |
AlGaAs/ |
770 |
3.5 |
4.0 |
1.50 |
1.70 |
8 |
40 |
30 |
|
DDH740N |
AlGaAs/ |
740 |
3.5 |
4.0 |
1.60 |
1.70 |
8 |
40 |
30 |
|
DDH725N |
AlGaAs/ |
725 |
3.2 |
3.8 |
1.60 |
1.70 |
8 |
40 |
30 |
|
DDH700N |
AlGaAs/ |
700 |
3.5 |
4.0 |
1.70 |
1.75 |
8 |
50 |
35 |
|
DDH680N |
AlGaAs/ |
680 |
3.5 |
4.0 |
1.70 |
1.75 |
8 |
50 |
35 |
*on request by customers