SM Group - DDH(680-700)N IR LED’s Wafers

Structure

Layer	Thickness, μm	Carrier concentration, cm^-3	Mole-Fraction AlAs
n-GaAlAs(Te)	12-15	>2.0^.10¹⁸	0.6
p-GaAlAs(Zn)	2-3	>5.0^.10¹⁷	0.28-0.30
p-GaAlAs(Zn)	120-140	>5.0^.10¹⁷	0.6

Size

Round (cross-round) D=37-40 mm

Characterics

Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	Power at 20mA P₀ [mW]		Forward voltage at 20 mA U_f [V]		Reverse voltage at 10 µA U_r [V] min.	Response time [ns]
Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	min	typ.	typ.	max	Reverse voltage at 10 µA U_r [V] min.	Tr	Tf
DDH 680N	AlGaAs/ p-AlGaAs	680	3.0	3.5	1.7	1.75	>8	50	35
DDH 700N	AlGaAs/ p-AlGaAs	700	3.0	3.5	1.7	1.75	>8	50	30

* on request by customer.

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