SM Group - DDH(760-810)N IR LED’s Wafers

Structure

Layer	Thickness, μm	Carrier concentration, cm^-3	Mole-Fraction AlAs
n-GaAlAs(Te)	15-20	>1.0^.10¹⁸	0.20(0.55*)-0.60
p-GaAlAs(Zn,Ge)	1.0-2.5	5.0^.10¹⁷	0.08-0.16
p-GaAlAs(Zn)	130-140	>5.0^.10¹⁷	0.27-0.55

* DDH770N

Size

Round (cross-round) D=37-50 mm

Characterics

Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	Power at 20mA P₀ [mW]		Forward voltage at 20 mA U_f [V]		Reverse voltage at 10 µA U_r [V] min.	Response time [ns]
Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	min	typ.	typ.	max	Reverse voltage at 10 µA U_r [V] min.	Tr	Tf
DDH770N	AlGaAs/ p-AlGaAs	770	3.5	4.0	1.50	1.70	8	40	30
DDH810N	AlGaAs/ p-AlGaAs	810	3.8	4.5	1.45	1.65	8	40	30

* on request by customer.

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