DDH 910P IR LED’s Wafers

Structure:

 

Layer

Thickness, μm

 Carrier concentration,
cm-3 		 Mole-Fraction AlAs

p-GaAlAs(Ge)

15-20

>1.0.1018

0.10-0.30

p-GaAs(Ge,Si)

2.0-4.0

5.0.1017

0.00

n-GaAlAs(Te)

130-140

>2.0.1017

0.10-0.30

Size

Round (cross-round) D=37-50 mm

Characterics

 

Type

Material
structure/
substrate

Peak wave
length
λp,±10
(±5)*[nm]

Power
at 20mA
P0 [mW]

Forward
voltage
at 20 mA
Uf [V]

Reverse
voltage
at 10 µA
Ur [V] min.

Response
time [ns]

min.

typ.

typ.

max.

Tr

Tf

DDH 910P

AlGaAs/
n-AlGaAs

910

3.0

3.5

 1.25

1.35

8

120

100

* on request by customer

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