GaAs p-i-n wafers for power electronics devices are our new development. Its mass production had been started from November 2012. 

Main parameters of GaAs p-i-n wafers:

Diameter, mm - 50;

Reverse voltage, U_R, V - 600 - 1000;

Forwarde voltage, U_F, V - 1,3 - 1,7;

Reverse-recovery time, t_rr, ns - 25 - 60

Actual set of parameter has to be specified by agreement with consumer