HS 950P IR LED’s Wafers

Structure:

Layer

Thickness, μm

 Carrier concentration,
cm-3

p-GaAs(Si)

60-70

(2-3).1018

n-GaAs(Si)

10-20

(1-5).1017

n-GaAs substrate (Te)

  

(0.7-2).1018

Total thickness, μm

230-270

  



Size

Round (cross-round) D=37-50 mm

Characterics

 

Type

Material
structure/
substrate

Peak wave
length
λp,±10
(±5)*[nm]

Power
at 20mA
P0 [mW]

Forward
voltage
at 20 mA
Uf [V]

Reverse
voltage
at 10 µA
Ur [V] min.

Response
time [ns]

min.

typ.

typ.

max.

Tr

Tf

HS 950P

GaAs/
p-GaAs

950

1.0

1.2

 1.1

1.2

8

500

500

* on request by customer
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