| Layer |
Thickness, μm |
Carrier concentration, cm-3 |
Mole-Fraction AlAs |
|
p-GaAlAs(Ge) |
15-20 |
>1.0.1018 |
0.10-0.30 |
|
p-GaAlAs(Ge) |
1.0-3.0 |
5.0.1017 (1.0.1018)** |
0.01(0.03)* |
|
n-GaAlAs(Te) |
130-140 |
>2.0.1017 |
0.10-0.30 |
* DDH850P
** DDH870PS
Size
Round (cross-round) D=37-50 mm
Characterics
|
Type |
Material |
Peak wave |
Power |
Forward |
Reverse |
Response |
|||
|
min |
typ. |
typ. |
max |
Tr |
Tf |
||||
|
DDH870P |
AlGaAs/ |
870 |
3.5 |
4.0 |
1.25 |
1.35 |
8 |
30 |
25 |
|
DDH870PS |
AlGaAs/ |
870 |
2.8 |
3.4 |
1.25 |
1.35 |
8 |
10 |
10 |
|
DDH850P |
AlGaAs/ |
870 |
3.5 |
4.0 |
1.30 |
1.40 |
8 |
30 |
25 |
* on request by customer.