Our company manufactures a wide range of "red" emitting structures according to concrete requirements of customers, which are characterized by a certain set of parameters, such as:

• type of structure (SH, DH or DDH);

• quantity and type of epitaxial layers;

• emission power;

• peak wavelength of emission;

The structures are made as round wafers with diameter 37-40mm or 50mm and with thickness 150-450 microns.

Main types of structures are indicated in the following Table:

Type	Material structure/ substrate	Peak wave length λp,±10 (±5)*[nm]	Luminous Intensity at 20mA, Iv [mCd]		Forward voltage at 20 mA Uf [V]		Reverse voltage at 10 µA Ur [V] min.
			min.	typ.	typ.	max.
SH650N n-side up	AlGaAs/ p-GaAs	650	5.0	7.0	1.70	1.85	8
DH650N n-side up	AlGaAs/ p-GaAs	650	8.0	10.8	1.75	1.90	8
DDH660N n-side up	AlGaAs/ p-AlGaAs	660	20.0	30.0	1.80	1.90	8
DDH660P р-side up	AlGaAs/ n-AlGaAs	660	18.0	20.0	1.90	1.95	8

*on request by customers