SM Group - SH and DH 650N Red LED’s Wafers

Structure

Layer	Thickness, μm	Carrier concentration, cm^-3	Mole-Fraction AlAs
n-GaAlAs(Te)	10-15	>5.0^.10¹⁷	0.8-0.6
p-GaAlAs(Zn)	10-15	>5.0^.10¹⁷	0.21-0.24
p-GaAlAs(Zn)-sub.	220-400	>8.0^.10¹⁸	0

Size

Round (cross-round) D=37-50 mm

Characterics

Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	Power at 20mA P₀ [mW]		Forward voltage at 20 mA U_f [V]		Reverse voltage at 10 µA U_r [V] min.	Response time [ns]
Type	Material structure/ substrate	Peak wave length λ_p,±10 (±5)*[nm]	min	typ.	typ.	max	Reverse voltage at 10 µA U_r [V] min.	Tr	Tf
SH 650N	AlGaAs/ p-AlGaAs	650	5.0	7.0	1.70	1.85	8	50	40
DH 650N	AlGaAs/ p-AlGaAs	650	8.0	10.0	1.75	1.90	8	50	40

* on request by customer.

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