The shipment of first GaAs structures for p-i-n diodes

The development of laboratory growth method for GaAs p-i-n structures has been fulfilled. GaAs structures for power electronics p-i-n diodes are delivered to customers
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GaAs structures for p-i-n diodes

Development of GaAs p-i-n structures for power electronics p-i-n diodes has been started by "MeGa Epitech" Co Ltd.
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The Saint George bronze statuette award on XI International forum "High technologies XXI" for "MeGa Epitech" Co Ltd. project

"MeGa Epitech" Co Ltd.  has obtained the Saint George bronze statuette award on XI International forum "High technologies XXI" for development of technology and launch of epitaxial heterostructures Ø50 mm for IR range emitters by LPE
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The Silver medal on IX Moscow International Salon of Innovations and Investments for "MeGa Epitech" Co Ltd. development

"MeGa Epitech" Co Ltd. has obtained the Silver medal award on IX Moscow International Salon of Innovatios and Investments for development of GaAlAs epitaxial heterostructures for LEDs
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